Home > Technology > Image Sensor > Methodology   As an example of nano application, we presumed it is possible to make high sensitivity image sensors that manufacture nano structural unit pixels as nano-scale photodetector during the pre-existing CMOS production process. Nano detectors have the characteristic of increased sensitivity as it goes to a small photo detection area. It is also possible to make peripheral signal processing transistors with minimal size. Through this method, we could break a technological barrier which has never been overcome with previous technology. Constructive using for quantum structures (quantum well, quantum wire, quantum dot) as semiconductor material enables formulating and controlling potential barrier generated from restrained electronic energy due to 2, 1 or 0 dimensional quantum effect, thus we could obtained nano photodetector that can control size and flow of electric current by minor light detected from photo detection area. This structure carries high sensitive photodetector to be work. We could develop new conceptual image sensor because the reasons are; this is very simple structure and series or parallel connecting method derives output increment as well as formulate amplified circuit on same chip through batch process.