Home > Technology > Image Sensor > Type of image sensors   -CIS structure : It stands for contact (closely adhesive) image sensor, a small image input device composed of a light source, lens, and sensor in one. -Characteristics : No adjustment required compared to previous CCD Type; expands market shares based on the future possibility of miniature design.   CMOS accumulates a signal charge in proportion to the intensity of illumination in each pixel, using spatial sampling function by Metal Oxide Semiconductor that possess pixels as unit. When exposure is completed in CMOS, electric charge and electric pressure transformations generate in each pixels.   Charge Coupled Device converts the charge packet of each pixel's electric charge to the electric pressure and buffer in order to transmit it common output structure that to outside.   Features Comparison of CCD and CMOS Image Sensors Items CCD CMOS Structure Composed of photoelectric transformation semiconductor and charge coupled device Composed of photoelectric transformation semiconductor and CMOS switch Principle Accumulate electric charge generated by lightning energy and transmitted Semiconductor switch reads out electric charge generated by lighting energy Advantages 1. superior image quality 2. high sensitivity 1. Highly integrated circuit and able to make one-chip with peripheral circuit 2. low power consumption 3. low price Disadvantages 1. high production cost 2. complex peripheral circuit, plural electricity, high power consumption 3. unable to make one-chip with peripheral IC 1. frequent noise 2. low sensitivity 3. narrow dynamic range Application 1. High quality Image Sensor applications 2. High Resolution aiming 1. Middle to -low-end price image sensor applications 2. expecting continuous technical improvements