Home > Technology > Image Sensor > Comparison Image Sensors     CCD CMOS-image sensor SMPD1-image sensor Sensor Scheme Type PN Photodiode(10) PN Photodiode(20) Single MOS(Phototransistor) Pixel Structure * Bunket relay method * Charge transfer to Voltage * Good Sensitivity(1 A/W),    good S/N ratio * Smear effect * Multi-Power supply    (+15V, +3.3V, -7.5V) * High Resolution(5.0M) - Signal out from each pixel    with amp - Single Low Voltage(+2.8V)    i æ Low Power - No Smear - Bad Sensitivitye(~0.5 A/W),    bad S/N ratio(FPN) - Low Resolution    (Resolution 1.0M) - Signal out from each pixel    with amp - Single Low Voltage    (up to +2V) - No Smear - Excellent Sensitivitye    (over 1000 A/W), - Good S/N ratio - High Resolution(over 2.0M) Circuits <3 Chips> ① CCD Image Sensor ② A-D Converter     (CDS/AGC, A-D) ③ Operational Circuit <Single Chip> ① CIS+AGC+A-D+Timing     +Sync-Generator <Single Chip> ① SMPD+AGC+A-D     +Timing Generator Proce Own Specialized Line Standard CMOS Line Standard CMOS Line Price Expensive(10) Cheap(1) Cheap(0.5)   Pixel Sensitivity Comparison   A B C SMPD-IS PARAMETER Units VGA 3.1 Mega VGA 3.1 Mega VGA VGA Pixel Size nm 5600 x 5600 3200 x 3200 9900 x 9900 3200 x 3200 8000 x 8000 4000 x 4000 Pixel Array   640x480 2048x1536 659x494 2048x1536 644x484 640x480 Power Supply V 2.5 3.3 / 1.8 3.3 3.3 3.3 3.3 Lens Size inch 1/4 1/2 1/2 1/2 1/2 1/6 Sensitivity V/lux·s 1.12 0.90 2.0(Green) n/a 2.7(Green) 3×104 Dynamic Range dB 62 60 60 61 48 Max. 120 SNR dB 46 40 n/a 43 n/a n/a FPN   < 0.03% < 0.03% n/a n/a n/a       SMPD-IS Hynix Pixelplus Micron Sensitivity [V/lux·s] 2400(typical) 1.5 3.1 > 1