Home > Technology > Image Sensor > Concept Image Sensor   Nanotechnology currently being applied in various fields of semiconductors could be the proper solution to overcome the technical limitations of image sensors. A brief definition of nanotechnology is as follows: when decreasing the physical length of a semiconductor less than the de Broglie wavelength, a carrier such as an electron in a semiconductor is spatially restrained. This brings about a transformation of the semiconductor's physical property, which is dissimilar to bulk semiconductors, where energy levels are degenerated as quantization, and its energy density level is subsequently increased. Quantum mechanical effects applied to processing technology is nanotechnology.   Low-dimensional nano structure concept and quantum effect diagram   Based on the characteristics of high density, high sensitivity, very small size, very low power consumption and higher performance, the next generation image sensor using nanotechnology will be expected to obtain an absolute advantage over the pre-existing image sensor in the aspect of functional effect. Sensitivity peculiarity reducing unit pixel size is more important when applied to a higher pixel density, and its worth becomes greater. In order to heighten the density per unit pixel, the unit pixel size should be reduced, which means the fill factor becomes smaller since the aperture ratio of the unit pixel is reduced. For this reason, the core technology for the development of image sensors is to increase the pixel density and simultaneously enlarge the fill factor as much as possible. This technology could be proven by the quantum effect using nanostructure, and consequently make possible highly dense, sensitive image sensors. After ion implantation to the SOI substrate and formulating a quantum structural nano wire, the phenomenon of electrons functioning as multiple carriers enables operation under low power consumption, high optical response characteristics and high-speed photoelectric transformation. Along with minimum partial lines from existing silicon procedure, the patterning mesa structure and nano wire could be converted to quantum wire after the patterning mesa structure using minimum partial lines using existing silicon process, and passing the delicate oxidation procedure. Thus, it's applicable for image sensors to function as high-resolution photo-detection sensors using simple quantum structure and utilizing electrons as carriers rather than using p-n junction photodiodes, and also able to develop into high functioning photo-transistors which increase gate electrodes. It means that a quantum photo-detect sensor using nanotechnology would show not only the characteristics of high sensitivity at hundreds of thousands of times greater depth than conventional photodiodes, but also the light signal amplification ratio would improve more than ten-fold.   New conceptual photo-detector suggestion to solve problems of current technology