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Bulk
Bulk effect
CCD
CIS
CMOS
Detector
 
Diode
Fill Factor(FF)
FPN(Fixed Pattern Noise)
LED
Mesa Type Transistor
MOSFET
 
Photodiode
Pixel
PN junction
SOI
Transistor
6T(IT,BT,NT,ST,ET,CT)
 
Bulk
Circuit substrate of MOSFET
 
 
Bulk effect
Generally flows through MOSFET and is controlled by the potential gate. Nevertheless, bulk potential has unwanted parasitic effects. A bulk effect diode derived from bulk effect is a device which uses many effects generated among semiconductor crystals by attached ohm contact in order not to formulate two electrodes in a semiconductor crystal.
 
 
CCD
An abbreviation for Charge Coupled Device, it gradually transforms electric charges to voltage within each pixel and buffering that to transmit it to common output structures.
 
 
CIS
Contact Image Sensor; a small picture input device which contains a light source, lens and sensor in one.
 
 
CMOS
Complementary Metal Oxide Semiconductor; a metal oxide semiconductor has pixels as a unit with accumulated signal charge proportionate to each pixel, illumination intensity and using spatial sampling function. When exposure is completed, electrode-voltage transformation is generated in each pixel.
 
 
Detector
Most people can't tell the difference between a sensor and a detector. Sensors indicate more active status and detectors are considered to be bigger devices that include many sensors.
 
 
Diode
Electronic device with two terminals that conducts the current in only one direction. Typically it consists of a p-n junction, the juxtaposition of an n-type semiconductor and p-type semiconductor, and is usually on the same substrate.
 
 
Fill Factor(FF)
Electronic device with two terminals that conducts the current in only one direction. Typically it consists of a p-n junction, the juxtaposition of an n-type semiconductor and p-type semiconductor, and is usually on the same substrate.
 
 
FPN(Fixed Pattern Noise)
Fixed Pattern Noise, or Spatial Noise is the unwanted static (DC) variation of the response of all pixels in the image. Expressed as an offset in volts or in ADC bits.
 
 
LED
Light emission diode is a semiconductor device that emits visible light when an electric current passes through it. The light is not particularly bright, but in most LEDs it is monochromatic,
Some LEDs emit infrared energy such as a light emission diode.
 
 
Mesa TypeTransistor
Composed of an emitter or base using diffusion technology on silicon or germanium substrate and also vacuum amplification, printing photograph technology.
We use this term, mesa, because sections are made by bench type. A Mesa transistor has advantages over high frequency, enduring voltage, such as equality of production being higher than compound metal types.
 
 
MOSFET
Metal-oxide semiconductor field effect transistor
 
 
Photodiode
Photodiodes are P-N junctions specifically designed to optimize their inherent photosensitivity. Photodiodes can be used two ways - in a photovoltaic or photoconductive role. To use photodiodes in their photoconductive mode, the photodiode is reverse-biased; the photodiode will then allow a current to flow when it is illuminated.
 
 
Pixel
Photodiodes are P-N junctions specifically designed to optimize their inherent photosensitivity. Photodiodes can be used two ways - in a photovoltaic or photoconductive role. To use photodiodes in their photoconductive mode, the photodiode is reverse-biased; the photodiode will then allow a current to flow when it is illuminated.
 
 
PN junction
Meeting zone (area) of positive polarity and negative polarity.
Any free charge, which wanders into the depletion zone, finds itself in a region with no other free charges. Locally it sees a lot of positive charges (the donor atoms) on the n-type side and a lot of negative charges (the acceptor atoms) on the p-type side. These exert a force on the free charge, driving it back to its 'own side' of the junction away from the depletion zone.

P-type Semiconductor
Under a zero electric field and equilibrium, a p-type semiconductor contains a majority of holes and few electrons. (I placed "holes" in the blank based on the next entry.)
P-type silicon is usually obtained by doping with acceptor ions.

N-type semiconductor
Under a zero electric field and equilibrium, an n-type semiconductor contains a majority of holes and few electrons. P-type silicon is usually obtained by doping with donor ions.
 
 
SOI : silicon on insulator
A chip architecture that increases the transistor switching speed by reducing capacitance (build-up of electrical charges in the transistor's elements), and thus reducing the discharge time.
The power requirement is also reduced in some designs. The SOI technique creates the transistors on a thin top silicon layer that is separated from the silicon substrate by a thin insulating layer of glass or silicon dioxide. One method of forming this insulating layer is the Separation by Implantation of Oxygen (SIMOX) technique, which implants oxygen into the wafer under intense heat.
 
 
Transister
An amplifier with Germanium, it is composed to stand over the 2pn junction and able to be categorized as a PNP and NTN transistor. Among the three terminals in the transistor, the coordinate 1~2 terminal is a common terminal, the second is for inputting and the third is an output terminal for amplification.
 
 
6T(IT,BT,NT,ST,ET,CT)
6T is technology for the future.
IT
(Information Technology)
IT is not only for computers, software or services. IT is a combination of all these elements, capped by a vision on how technology can help an organization to reach its goals. Today, businesses are concentrating on their core activities in their struggle to survive. The IT department has to do ever more with less. Under these circumstances, the need for well-informed IT professionals exists.
BT
(Bio-technology)
The use of biological processes, as through the exploitation and manipulation of living organisms or biological systems, in the development or manufacture of a product or in the technological solution to a problem. As such, biotechnology is a general category that has applications in pharmacology, medicine, agriculture, and many other fields.
NT
(Nano-technology)
Nanotechnology is a general term that refers to technology which enables the control and manipulation of atoms and molecules at their level (10~9mm). NT allows for the creation of a new area of scientific technology or the enhancement of a pre-existing product's functions. We assume NT will become a core technology along with IT, BT, and ET, and a revolutionary one. Even thought NT is becoming a core technology related to IT, BT, ET, it's in the preliminary stage and the expected ripple effects will be very broad and strong.
ST
(Space technology)
Space technology is acknowledged as a combined technology related to satellites, projectiles, and aircraft development. It also is expected to affect system technology as it requires high technology in order to work with electronics, semiconductors, computers and materials. ST can contribute to raising technological levels, especially when we behind in development compared to other advance countries.
ET
(Environment Technology)
Environment technology is an approach to the design of human-machine interfaces that seek to provide users with a sense of immersion in a computer-generated, synthetic world. This technology researches the total of all the surrounding natural conditions that affect the existence of living organism on Earth, including air, water, soil, and minerals, therefore the local complex of such conditions affects a particular organism and ultimately determines its physiology and survival.
CT
(Culture Technology)
This term refers to technology for developing new culture and the art industry based on digital media. Recently, demand is high for digital contents due to revitalization of the Internet and improvement of digital technology. This technology is expected to maximize our creativity by a technology-knowledge integrated industry feature which is necessary in order to further new cultural and art industry development based on high value-added digital media.